to-126 parameter l value unit collector-base voltage v cbo 80 v collector-emitter voltage v ceo 80 v emitter-base voltage v ebo 5 v collector current i c 1.5 a base current i b 0.5 a total dissipation at p tot 12.5 w max. operating junction temperature t j 150 o c storage temperature t stg -55~150 o c bd139 / BD140 description parameter symbol test conditions min. typ. max. unit collector cut-off current i ceo v cb =80v, i e =0 10 ua emitter cut-off current i ebo v eb =5v, i c =0 10 ua collector-emitter sustaining voltage v ceo i c =30ma, i b =0 80 v dc current gain h fe(1) v ce =2v, i c =0.5a 25 h fe(2) v ce =2v, i c =150ma 40 250 collector-emitter saturation voltage v ce(sat) i c =0.5a,i b =50ma 0.5 v base-emitter saturation voltage v be(sat) v ce =2v,i c =0.5a 1.0 v current gain bandwidth product f t v ce =10v,i c =500ma 3 mhz complementary silicon power ttransistors product specification it is intented for use in power amplifier and switching applications. electrical characteristics absolute maximum ratings( ta = 25 c) o ( ta = 25 c) o tiger electronic co.,ltd
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